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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5071 DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 500 Collector-base voltage Open emitter Collector-emitter voltage Open base 400 10 Emitter-base voltage Open collector Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 12 24 4 100 150 -55~150 UNIT V V V A A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ;IB=0 IC=7A ;IB=1.4A IC=7A ;IB=1.4A VCB=500V; IE=0 VEB=10V; IC=0 IC=7A ; VCE=4V IE=0 ; VCB=10V,f=1MHz IE=-1A ; VCE=12V 10 105 10 MIN 400 TYP. 2SC5071 SYMBOL V(BR)CEO VCEsat VCEsat ICBO IEBO hFE COB fT MAX UNIT V 0.5 1.3 100 100 30 |I |I V V A A pF MHz Switching times ton ts tf TOR NDU ICO E SEM ANG INCH Turn-on time Storage time 1.0 IC=7A;RL=28.5| IB1=0.7A; IB2=-1.4A VCC=200V 3.0 Fall time 0.5 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5071 TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5071 TOR NDU ICO E SEM ANG INCH 4 |
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